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SUD50N06-08H
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
60
3.4
4.5
± 100
V
nA
V DS = 60 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 60 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 60 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current
b
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
50
0.0065
0.0078
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 10 V, I D = 20 A, T J = 125 °C
0.013
Ω
V GS = 10 V, I D = 20 A, T J = 175 °C
0.0156
Forward Transconductance b
g fs
V DS = 15 V, I D = 20 A
25
S
Dynamic a
Input Capacitance
C iss
7000
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, V DS = 25 V, F = 1 MHz
450
240
pF
Gate Resistance
Total Gate Charge
c
R g
Q g
f = 1 MHz
0.75
1.5
94
2.3
145
Ω
Gate-Drain Charge
Gate-Source Charge c
c
Turn-On Delay Time c
Q gs
Q gd
t d(on)
V DS = 30 V, V GS = 10 V, I D = 50 A
35
20
28
45
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 30 V, R L = 0.6 Ω
I D ? 50 A, V GEN = 10 V, R g = 2.5 Ω
13
50
10
20
75
15
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 °C)
Pulsed Current
I SM
100
A
Diode Forward Voltage
b
V SD
I F = 50 A, V GS = 0 V
1.0
1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = 50 A, di/dt = 100 A/μs
45
70
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
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